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Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications

Engineering and Technology

Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications

M. Lee, C. Y. Park, et al.

This paper presents innovative split-gate field-effect transistor structures using molybdenum disulfide, showcasing unique AND and OR characteristics. With the development of these transistors, researchers achieve high integration and multi-functionality in 2D material-based electronics, conducted by the authors Minjong Lee, Chang Yong Park, Do Kyung Hwang, Min-gu Kim, and Young Tack Lee.

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