Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene are promising for future electronics. This research investigates electronic transport in a scalable all-2D CVD-grown molybdenum disulfide (MoS2) field-effect transistor (FET) with graphene contacts. The study finds that graphene's tunable Fermi level allows for nearly perfect band alignment, reducing the Schottky barrier and improving mobility. Temperature-dependent measurements reveal phonon/impurity scattering as mobility-limiting factors and a gate- and bias-induced metal-insulator transition explained by variable-range hopping transport. These findings are significant for optimizing future electronic and optoelectronic devices.

Md. Anamul Hoque, Antony George, Vasudev Ramachandra, Emad Najafidehaghani, Ziyang Gan, Richa Mitra, Bing Zhao, Satyaprakash Sahoo, Maria Abrahamsson, Qiuhua Liang, Julia Wiktor, Andrey Turchanin, Sergey Kubatkin, Samuel Lara-Avila, Saroj P. Dash