This paper reports a robust solid-state single-molecule field-effect transistor (FET) architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor uses a single dinuclear ruthenium-diarylethene (Ru-DAE) complex as the conducting channel, achieving field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Ultrathin high-k metal oxides as dielectric layers are key to this performance. The Ru-DAE's photoisomerisation property enables reversible photoswitching. Experimental and theoretical results demonstrate dual-gated behaviors at the single-molecule level, paving the way for ultraminiaturized functional electrical circuits beyond Moore's law.

Linan Meng, Na Xin, Chen Hu, Hassan Al Sabea, Miao Zhang, Hongyu Jiang, Yiru Ji, Chuancheng Jia, Zhuang Yan, Qinghua Zhang, Lin Gu, Xiaoyan He, Pramila Selvanathan, Lucie Norel, Stéphane Rigaut, Hong Guo, Sheng Meng, Xuefeng Guo