This paper investigates the phenomenon of giant persistent photoconductivity (GPPC) observed in monolayer MoS<sub>2</sub> (ML-MoS<sub>2</sub>) field-effect transistors (FETs) upon exposure to ultraviolet (UV) light. The study reveals an exceptionally long-lasting increase in conductivity (up to 10<sup>7</sup> times) after UV irradiation, persisting for approximately 30 days. Unlike previous attributions to extrinsic factors, the authors demonstrate that this GPPC effect stems primarily from intrinsic lattice defects within the ML-MoS<sub>2</sub>, creating numerous localized states within the bandgap. Experimental techniques such as scanning tunneling spectroscopy (STS), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) measurements support this conclusion, paving the way for defect-based engineering of TMDs for advanced device applications.
Publisher
npj 2D Materials and Applications
Published On
Jan 11, 2021
Authors
A. George, M. V. Fistul, M. Gruenewald, D. Kaiser, T. Lehnert, R. Mupparapu, C. Neumann, U. Hübner, M. Schaal, N. Masurkar, L. M. R. Arava, I. Staude, U. Kaiser, T. Fritz, A. Turchanin
Tags
giant persistent photoconductivity
monolayer MoS2
field-effect transistors
UV irradiation
intrinsic lattice defects
defect-based engineering
TMDs
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