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An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Engineering and Technology

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Y. Meng, W. Wang, et al.

Discover the groundbreaking research by You Meng and colleagues on the innovative tellurium-selenium-oxygen (TeSeO) blending strategy, which activates hole transport in inorganic semiconductors. With tunable bandgaps and remarkable hole mobility, TeSeO films pave the way for high-performance photodetectors that exhibit flexibility, ultrafast responses, and exceptional responsivity.

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