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An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Engineering and Technology

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Y. Meng, W. Wang, et al.

Discover the groundbreaking research by You Meng and colleagues on the innovative tellurium-selenium-oxygen (TeSeO) blending strategy, which activates hole transport in inorganic semiconductors. With tunable bandgaps and remarkable hole mobility, TeSeO films pave the way for high-performance photodetectors that exhibit flexibility, ultrafast responses, and exceptional responsivity.

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Playback language: English
Abstract
Inorganic semiconductors typically have limited p-type behavior, hindering complementary device development. This work introduces an inorganic blending strategy using tellurium-selenium-oxygen (TeSeO) to activate hole transport. By combining p-type semimetal, semiconductor, and wide-bandgap semiconductor, TeSeO exhibits tunable bandgaps (0.7–2.2 eV). Room-temperature-deposited TeSeO films show high hole mobility (48.5 cm²/Vs). Nanopatterned TeSeO photodetectors demonstrate high responsivity (603 A/W), ultrafast response (5 µs), and flexibility.
Publisher
Nature Communications
Published On
May 24, 2024
Authors
You Meng, Weijun Wang, Rong Fan, Zhengxun Lai, Wei Wang, Dengji Li, Xiaocui Li, Quan Quan, Pengshan Xie, Dong Chen, He Shao, Bowen Li, Zenghui Wu, Zhe Yang, SenPo Yip, Chun-Yuen Wong, Yang Lu, Johnny C. Ho
Tags
Inorganic semiconductors
TeSeO
hole transport
tunable bandgaps
photodetectors
responsivity
flexibility
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