Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In₂Se₃ on fluor-phlogopite

This paper presents a quasi-equilibrium growth (QEG) strategy for synthesizing inch-scale monolayer α-In₂Se₃ single crystals on fluor-phlogopite substrates. The QEG method effectively overcomes challenges associated with the small energy difference between locally stable orientations during growth, leading to robust single-orientation epitaxy. The high-quality single-crystal α-In₂Se₃ films exhibit high electron mobility (up to 117.2 cm²V⁻¹s⁻¹) and demonstrate reliable nonvolatile memory performance in ferroelectric field-effect transistors (Fe-FETs). This QEG method offers a promising route for producing large-area single-crystal 2D materials for applications in 2D ferroelectric devices and nanoelectronics.

Kunpeng Si, Yifan Zhao, Peng Zhang, Xingguo Wang, Qianqian He, Juntian Wei, Bixuan Li, Yongxi Wang, Aiping Cao, Zhigao Hu, Peizhe Tang, Feng Ding, Yongji Gong