Engineering and Technology

Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design

W. Xiao, X. Zheng, et al.

This groundbreaking study by Wei Xiao and colleagues unveils a double barrier design for ferroelectric tunnel junctions, achieving a remarkable tunneling electroresistance ratio of 2.210 × 10⁶. With the capability to independently control polarization across barriers, this innovation presents exciting possibilities for multi-state memory technology.

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