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Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design

Engineering and Technology

Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design

W. Xiao, X. Zheng, et al.

This groundbreaking study by Wei Xiao and colleagues unveils a double barrier design for ferroelectric tunnel junctions, achieving a remarkable tunneling electroresistance ratio of 2.210 × 10⁶. With the capability to independently control polarization across barriers, this innovation presents exciting possibilities for multi-state memory technology.

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Playback language: English
Abstract
This paper proposes a double barrier design for ferroelectric tunnel junctions (FTJs) to enhance tunneling electroresistance (TER). A Pt/BaTiO3/LaAlO3/Pt/BaTiO3/LaAlO3/Pt double barrier FTJ (DB-FTJ) model is designed and studied using density functional calculations. The DB-FTJ exhibits a giant TER ratio of 2.210 × 10⁶, significantly larger than single barrier FTJs. It also features an ultra-low resistance area product (0.093 kΩµm²) in the high conductance state. Independent polarization control of the two barriers allows for four resistance states, making DB-FTJs promising for multi-state memory applications.
Publisher
npj Computational Materials
Published On
Aug 14, 2023
Authors
Wei Xiao, Xiaohong Zheng, Hua Hao, Lili Kang, Lei Zhang, Zhi Zeng
Tags
ferroelectric tunnel junctions
tunneling electroresistance
double barrier design
multi-state memory
density functional calculations
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