Engineering and Technology

Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design

W. Xiao, X. Zheng, et al.

This groundbreaking study by Wei Xiao and colleagues unveils a double barrier design for ferroelectric tunnel junctions, achieving a remarkable tunneling electroresistance ratio of 2.210 × 10⁶. With the capability to independently control polarization across barriers, this innovation presents exciting possibilities for multi-state memory technology.

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~3 min • Beginner • English

Index

Abstract

We propose that the double barrier effect can substantially enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We design a Pt/BaTiO3/LaAlO3/Pt/BaTiO3/LaAlO3/Pt double-barrier ferroelectric tunnel junction (DB-FTJ), effectively two identical Pt/BaTiO3/LaAlO3/Pt single-barrier FTJs (SB-FTJs) in series. Density-functional calculations yield a giant TER ratio of 2.210 × 10^6 (2.210 × 10^8%) for the DB-FTJ—at least three orders of magnitude larger than that of comparable SB-FTJs—together with an ultra-low resistance–area product (RA) of 0.093 kΩ·µm^2 in the high-conductance state. Independent control of the polarization in the two ferroelectric barriers enables four distinct resistance states, making DB-FTJs promising for multi-state memory applications.

Publisher

npj Computational Materials

Published On

Aug 14, 2023

Authors

Wei Xiao, Xiaohong Zheng, Hua Hao, Lili Kang, Lei Zhang, Zhi Zeng

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