This paper introduces a non-contact metrology technique using scanning NV magnetometry (SNVM) to investigate Magnetic Random Access Memory (MRAM) performance at the individual bit level. The researchers demonstrate magnetic reversal characterization in individual bits to extract key magnetic properties, thermal stability, and switching statistics, highlighting the ability to identify out-of-distribution bits and enabling failure analysis. The study benchmarks two distinct bit etching processes, showing SNVM's potential for early-stage screening in MRAM production lines.

Vicent J. Borràs, Robert Carpenter, Liza Žaper, Siddharth Rao, Sebastien Couet, Mathieu Munsch, Patrick Maletinsky, Peter Rickhaus