Engineering and Technology

Ultrasensitive negative capacitance phototransistors

L. Tu, R. Cao, et al.

Explore groundbreaking advancements in sensitive photodetection with our report on an ultrasensitive negative capacitance MoS2 phototransistor, featuring a ferroelectric hafnium zirconium oxide gate dielectric. Discover its exceptional performance metrics, including a 17.64 mV/dec subthreshold slope and a photodetectivity of 4.75 × 10^14 cm Hz1/2 W−1 at room temperature. Conducted by Luqi Tu and colleagues, this research paves the way for innovative optoelectronic devices.... show more

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