Engineering and TechnologyCommunications Physics
Matryoshka phonon twinning in α-GaN
B. Wei, Q. Cai, et al.
This groundbreaking research delves into the phonon dynamics of α-GaN, a key material for third-generation power semiconductors, revealing a Matryoshka phonon dispersion that drives thermal conductivity anisotropy. Conducted by experts including Bin Wei and Ayman H. Said, it uncovers crucial insights for thermal management in electronics.
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