Engineering and Technology

Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors

Y. Jia, Z. Shi, et al.

This groundbreaking research by Yuping Jia and colleagues unveils a theoretical approach to enhance GaN-based semiconductors for optoelectronic applications. By transforming bulk GaN into innovative two-dimensional structures, the team predicts a remarkable increase in efficiency by eliminating harmful internal electrostatic fields while potentially improving optoelectronic properties.

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Abstract

GaN-based semiconductors are promising for optoelectronics, but their strong internal electrostatic field (IEF) harms lighting device efficiency. This paper theoretically predicts eliminating the IEF by reducing bulk GaN to two-dimensional (2D) structures. Thinning the material to nanometers causes a spontaneous wurtzite-to-haeckelite (48) configuration change, removing the IEF while maintaining or improving optoelectronic properties. Analysis of 2D GaN interactions with SiC and graphene substrates provides insights for experimental realization via a "thickness-controlled" vdW epitaxy scheme. The 48 configuration is proposed as a prospective material for various optoelectronic applications.

Publisher

npj 2D Materials and Applications

Published On

Aug 28, 2020

Authors

Yuping Jia, Zhiming Shi, Wantong Hou, Hang Zang, Ke Jiang, Yang Chen, Shanli Zhang, Zhanbin Qi, Tong Wu, Xiaojuan Sun, Dabing Li

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