logo
ResearchBunny Logo
Matryoshka phonon twinning in α-GaN

Engineering and Technology

Matryoshka phonon twinning in α-GaN

B. Wei, Q. Cai, et al.

This groundbreaking research delves into the phonon dynamics of α-GaN, a key material for third-generation power semiconductors, revealing a Matryoshka phonon dispersion that drives thermal conductivity anisotropy. Conducted by experts including Bin Wei and Ayman H. Said, it uncovers crucial insights for thermal management in electronics.... show more
Citation Metrics
Citations
7
Influential Citations
0
Reference Count
53
Citation by Year

Note: The citation metrics presented here have been sourced from Semantic Scholar and OpenAlex.

Related Publications

Explore these studies to deepen your understanding of the subject.

Giant Kerr nonlinearity of terahertz waves mediated by stimulated phonon polaritons in a microcavity chip
Physics

Giant Kerr nonlinearity of terahertz waves mediated by stimulated phonon polaritons in a microcavity chip

Y. Huang, Y. Lu, et al.

Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors
Engineering and Technology

Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors

Y. Jia, Z. Shi, et al.

Full phonon dispersion along the stacking direction in nanoscale van der Waals materials by picosecond acoustics
Physics

Full phonon dispersion along the stacking direction in nanoscale van der Waals materials by picosecond acoustics

S. Lee, S. Bae, et al.

Light-Enhanced Electron-Phonon Coupling in Photoexcited Graphene
Physics

Light-Enhanced Electron-Phonon Coupling in Photoexcited Graphene

S. Hu

Listen, Learn & Level Up
Over 10,000 hours of research content in 25+ fields, available in 12+ languages.
No more digging through PDFs, just hit play and absorb the world's latest research in your language, on your time.
listen to research audio papers with researchbunny