Engineering and Technology

Matryoshka phonon twinning in α-GaN

B. Wei, Q. Cai, et al.

This groundbreaking research delves into the phonon dynamics of α-GaN, a key material for third-generation power semiconductors, revealing a Matryoshka phonon dispersion that drives thermal conductivity anisotropy. Conducted by experts including Bin Wei and Ayman H. Said, it uncovers crucial insights for thermal management in electronics.