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Abstract
Understanding lattice dynamics is crucial for effective thermal management in electronic devices. This paper investigates the phonon dynamics of α-GaN, a crucial third-generation power semiconductor, using inelastic X-ray and neutron scattering, along with first-principles calculations. A Matryoshka phonon dispersion is revealed, amplifying phonon anharmonicity and reducing in-plane thermal transport due to increased three-phonon scattering. This contributes to α-GaN's anisotropic thermal conductivity and offers insights into phonon topology engineering for thermal management in semiconductors.
Publisher
Communications Physics
Published On
Oct 12, 2021
Authors
Bin Wei, Qingan Cai, Qiyang Sun, Yaokun Su, Ayman H. Said, Douglas L. Abernathy, Jiawang Hong, Chen Li
Tags
lattice dynamics
phonon dynamics
α-GaN
thermal conductivity
anharmonicity
thermal management
semiconductors
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