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Matryoshka phonon twinning in α-GaN

Engineering and Technology

Matryoshka phonon twinning in α-GaN

B. Wei, Q. Cai, et al.

This groundbreaking research delves into the phonon dynamics of α-GaN, a key material for third-generation power semiconductors, revealing a Matryoshka phonon dispersion that drives thermal conductivity anisotropy. Conducted by experts including Bin Wei and Ayman H. Said, it uncovers crucial insights for thermal management in electronics.

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Playback language: English
Abstract
Understanding lattice dynamics is crucial for effective thermal management in electronic devices. This paper investigates the phonon dynamics of α-GaN, a crucial third-generation power semiconductor, using inelastic X-ray and neutron scattering, along with first-principles calculations. A Matryoshka phonon dispersion is revealed, amplifying phonon anharmonicity and reducing in-plane thermal transport due to increased three-phonon scattering. This contributes to α-GaN's anisotropic thermal conductivity and offers insights into phonon topology engineering for thermal management in semiconductors.
Publisher
Communications Physics
Published On
Oct 12, 2021
Authors
Bin Wei, Qingan Cai, Qiyang Sun, Yaokun Su, Ayman H. Said, Douglas L. Abernathy, Jiawang Hong, Chen Li
Tags
lattice dynamics
phonon dynamics
α-GaN
thermal conductivity
anharmonicity
thermal management
semiconductors

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