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Magnetic memory driven by topological insulators

Engineering and Technology

Magnetic memory driven by topological insulators

H. Wu, A. Chen, et al.

Explore the groundbreaking research by Hao Wu and colleagues that reveals a functional topological insulator-magnetic tunnel junction device with a remarkable tunneling magnetoresistance ratio of 102%. This innovative approach promises to reshape the landscape of magnetic memory technology by significantly reducing switching current densities at room temperature.

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