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Magnetic memory driven by topological insulators

Engineering and Technology

Magnetic memory driven by topological insulators

H. Wu, A. Chen, et al.

Explore the groundbreaking research by Hao Wu and colleagues that reveals a functional topological insulator-magnetic tunnel junction device with a remarkable tunneling magnetoresistance ratio of 102%. This innovative approach promises to reshape the landscape of magnetic memory technology by significantly reducing switching current densities at room temperature.

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Playback language: English
Abstract
Giant spin-orbit torque (SOT) from topological insulators (TIs) offers an energy-efficient method for writing magnetic memory. However, integration with magnetic tunnel junctions (MTJs) poses a significant challenge. This work demonstrates a functional TI-MTJ device, achieving a state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and an ultralow switching current density of 1.2 × 10<sup>5</sup> A cm<sup>−2</sup> at room temperature. The charge-spin conversion efficiency (θ<sub>SH</sub>) in TIs, quantified by SOT-induced magnetic switching field shift (θ<sub>SH</sub> = 1.59) and SOT-induced ferromagnetic resonance (ST-FMR) (θ<sub>SH</sub> = 1.02), is an order of magnitude larger than in conventional heavy metals. This work paves the way for TI-driven SOT-MRAM, potentially revolutionizing magnetic memory technology.
Publisher
Nature Communications
Published On
Oct 29, 2021
Authors
Hao Wu, Aitian Chen, Peng Zhang, Haoran He, John Nance, Chenyang Guo, Julian Sasaki, Takanori Shirokura, Pham Nam Hai, Bin Fang, Seyed Armin Razavi, Kin Wong, Yan Wen, Yinchang Ma, Guoqiang Yu, Gregory P. Carman, Xiufeng Han, Xixiang Zhang, Kang L. Wang
Tags
spin-orbit torque
topological insulators
magnetic tunnel junctions
tunneling magnetoresistance
spintronics
magnetic memory

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