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Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications

Engineering and Technology

Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications

M. Lee, C. Y. Park, et al.

This paper presents innovative split-gate field-effect transistor structures using molybdenum disulfide, showcasing unique AND and OR characteristics. With the development of these transistors, researchers achieve high integration and multi-functionality in 2D material-based electronics, conducted by the authors Minjong Lee, Chang Yong Park, Do Kyung Hwang, Min-gu Kim, and Young Tack Lee.

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Playback language: English
Abstract
This paper proposes two homogeneous molybdenum disulfide (MoS₂) based split-gate field-effect transistor (SG-FET) structures: AND-FET and OR-FET, with perpendicular gap directions. The AND-FET exhibits AND switching characteristics, while the OR-FET exhibits OR characteristics. These structures are analogous to folded series and parallel connections of n-type transistors, respectively, enabling NAND and NOR logic gates using a single active channel. This approach advances multi-functionality and high integration in 2D material-based electronics.
Publisher
npj 2D Materials and Applications
Published On
Jul 08, 2022
Authors
Minjong Lee, Chang Yong Park, Do Kyung Hwang, Min-gu Kim, Young Tack Lee
Tags
molybdenum disulfide
split-gate field-effect transistor
AND-FET
OR-FET
logic gates
2D materials
electronics

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