Longitudinal and latitudinal split-gate field-effect transistors | ResearchBunny

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Abstract

This paper proposes two homogeneous molybdenum disulfide (MoS₂) based split-gate field-effect transistor (SG-FET) structures: AND-FET and OR-FET, with perpendicular gap directions. The AND-FET exhibits AND switching characteristics, while the OR-FET exhibits OR characteristics. These structures are analogous to folded series and parallel connections of n-type transistors, respectively, enabling NAND and NOR logic gates using a single active channel. This approach advances multi-functionality and high integration in 2D material-based electronics.

Publisher

npj 2D Materials and Applications

Published On

Jul 08, 2022

Authors

Minjong Lee, Chang Yong Park, Do Kyung Hwang, Min-gu Kim, Young Tack Lee

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