Engineering and TechnologyNPG Asia Materials
Interface engineering for substantial performance enhancement in epitaxial all-perovskite oxide capacitors
J. Bang, J. Lee, et al.
This study, conducted by Jeongil Bang and colleagues, unveils a remarkable enhancement in the dielectric properties of a novel perovskite-based capacitor. Featuring a unique interface engineering approach, they achieved impressive results: a dielectric permittivity of 861 and minimal leakage current, thus paving the way for advanced DRAM technology.
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