Capacitors based on ABO₃-type perovskite oxides show considerable promise for overcoming the limitations of nanoscale integration with dynamic random access memory (DRAM) devices. This study reports substantially enhanced dielectric properties of an epitaxial SrRuO₃/Ba₀·₅Sr₀·₅TiO₃/SrRuO₃ MIM capacitor with a thin (10 nm) dielectric layer. Interface engineering, using a pit-free and stoichiometric SrRuO₃ bottom electrode, suppressed defect formation, reducing leakage current and achieving a dielectric permittivity of 861 and a leakage current density of 5.15 × 10⁻⁶ A/cm² at 1 V. This work advances perovskite-oxide-based capacitors for next-generation DRAM memories.

Jeongil Bang, Jaeho Lee, Eun Cheol Do, Hyungjun Kim, Byunghoon Na, Haeryong Kim, Bo-Eun Park, Jooho Lee, Che-Heung Kim, Ho Won Jang, Yongsung Kim