Engineering and Technology
High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K
L. Yang, D. Huh, et al.
This groundbreaking research reveals the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with an unprecedented ultra-thin Si crystallite size, demonstrating a ZT of 0.71 at 700 K—remarkably higher than previously observed for Si-based thermoelectrics at that temperature. The authors explored the potential to achieve even greater performance at higher temperatures.
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