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High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K

Engineering and Technology

High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K

L. Yang, D. Huh, et al.

This groundbreaking research reveals the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with an unprecedented ultra-thin Si crystallite size, demonstrating a ZT of 0.71 at 700 K—remarkably higher than previously observed for Si-based thermoelectrics at that temperature. The authors explored the potential to achieve even greater performance at higher temperatures.

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Abstract
This paper reports the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with an ultra-thin Si crystallite size of ~4 nm. Measurements of thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (S) on the same nanowire show a ZT of 0.71 at 700 K, significantly higher than any previously reported nanostructured Si-based thermoelectrics at that temperature. Modeling suggests the potential to achieve a ZT of ~1 at 1000 K.
Publisher
Nature Communications
Published On
Jun 24, 2021
Authors
Lin Yang, Daihong Huh, Rui Ning, Vi Rapp, Yuqiang Zeng, Yunzhi Liu, Sucheol Ju, Yi Tao, Yue Jiang, Jihyun Beak, Juyoung Leem, Sumanjeet Kaur, Heon Lee, Xiaolin Zheng, Ravi S. Prasher
Tags
porous silicon nanowires
thermoelectrics
thermal conductivity
Seebeck coefficient
ZT

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