Engineering and Technology

High efficiency and stability of ink-jet printed quantum dot light emitting diodes

C. Xiang, L. Wu, et al.

Discover how a groundbreaking approach to dual ionic passivation has led to ink-jet printed quantum dot light emitting diodes that achieve over 16% external quantum efficiency and an extraordinary half-life of more than 1,721,000 hours. This significant advancement in quantum dot technology paves the way for mass production and industrial applications, as demonstrated by the innovative research conducted by Chaoyu Xiang, Longjia Wu, Zizhe Lu, Menglin Li, Yanwei Wen, Yixing Yang, Wenyong Liu, Ting Zhang, Weiran Cao, Sai-Wing Tsang, Bin Shan, Xiaolin Yan, and Lei Qian.

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Abstract

The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.

Publisher

Nature Communications

Published On

Apr 02, 2020

Authors

Chaoyu Xiang, Longjia Wu, Zizhe Lu, Menglin Li, Yanwei Wen, Yixing Yang, Wenyong Liu, Ting Zhang, Weiran Cao, Sai-Wing Tsang, Bin Shan, Xiaolin Yan, Lei Qian

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