Engineering and Technology

Solution-processed quantum-dot light-emitting diodes combining ultrahigh operational stability, shelf stability, and luminance

Z. Ye, M. Chen, et al.

Discover how a novel bilayer electron-transporting layer design using SnO₂ nanoparticles is revolutionizing quantum-dot light-emitting diodes (QLEDs) by addressing shelf-stability issues and enhancing performance. This cutting-edge research led by Zi Ye, Mengyu Chen, Xingtong Chen, Wenchen Ma, Xiaojuan Sun, Longjia Wu, Xiongfeng Lin, Yu Chen, and Song Chen achieved remarkable luminance levels and operational lifetimes, all while completely inhibiting positive aging.

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Abstract

Solution-processed quantum-dot light-emitting diodes (QLEDs) suffer from shelf-stability issues due to the ZnO-induced positive aging effect. This paper presents a bilayer electron-transporting layer (ETL) design using SnO₂ nanoparticles (NPs) as a buffer layer between the quantum dots (QDs) and ZnO NPs. This design suppresses QD-ETL exciton quenching, tunes charge balance, and maintains high electron conductivity. The resulting bottom-emitting QLEDs achieve a maximum luminance exceeding 100,000 cd m⁻² and a T₉₅ operational lifetime of 6200 h at 1000 cd m⁻², while completely inhibiting positive aging.

Publisher

npj Flexible Electronics

Published On

Jan 31, 2022

Authors

Zi Ye, Mengyu Chen, Xingtong Chen, Wenchen Ma, Xiaojuan Sun, Longjia Wu, Xiongfeng Lin, Yu Chen, Song Chen

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