This paper presents the design and fabrication of a Si-based quantum dot light-emitting device (QLED) array composed of p-Si micropillars. The researchers investigated the mechanism of strain coupling effect modulation on the electroluminescence performance of these Si-based QLEDs. The emission intensity is shown to depend on the injected current density, which can be modulated by the strain coupling effect. The integrated device demonstrates potential applications in electronic skin and human-machine interfaces due to its compatibility with the Si-based semiconductor industry.

Yepei Mo, Xiaolong Feng, Li Zhang, Renhou Han, Rongrong Bao, Caofeng Pan