Physics
Giant shift upon strain on the fluorescence spectrum of VN NB color centers in *h*-BN
S. Li, J. Chou, et al.
This groundbreaking research by Song Li, Jyh-Pin Chou, Alice Hu, Martin B. Plenio, Péter Udvarhelyi, Gergő Thiering, Mehdi Abdi, and Adam Gali explores how strain influences the physical properties of nitrogen antisite-vacancy pairs in hexagonal boron nitride, highlighting their potential as quantum bits. The study uncovers a fascinating connection between strain and significant zero-phonon-line emission shifts under strong electron-phonon coupling, providing key insights into previously observed phenomena.
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