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Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

Engineering and Technology

Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

S. Li, B. Li, et al.

Discover the groundbreaking potential of a two-terminal lateral memristor using electron-beam-irradiated rhenium disulfide (ReS2), showcasing stable and gradual resistive switching. This innovative research by Sifan Li, Bochang Li, Xuewei Feng, Li Chen, Yesheng Li, Li Huang, Xuanyao Fong, and Kah-Wee Ang paves the way for energy-efficient neuromorphic computing through Schottky barrier height modulation.

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