This paper presents a two-terminal lateral memristor based on electron-beam-irradiated rhenium disulfide (ReS2), exhibiting a resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices demonstrate forming-free, stable gradual resistive switching with minimal transition voltage variation (6.3%/5.3%). This is attributed to the voltage-bias-induced motion of sulfur vacancies, modulating the ReS2/metal SBH. The gradual SBH modulation stabilizes temporal variation compared to abrupt switching in MIM-based memristors. Emulation of long-term synaptic plasticity is demonstrated, suggesting potential for energy-efficient neuromorphic computing.

Sifan Li, Bochang Li, Xuewei Feng, Li Chen, Yesheng Li, Li Huang, Xuanyao Fong, Kah-Wee Ang