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Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

Engineering and Technology

Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

S. Li, B. Li, et al.

Discover the groundbreaking potential of a two-terminal lateral memristor using electron-beam-irradiated rhenium disulfide (ReS2), showcasing stable and gradual resistive switching. This innovative research by Sifan Li, Bochang Li, Xuewei Feng, Li Chen, Yesheng Li, Li Huang, Xuanyao Fong, and Kah-Wee Ang paves the way for energy-efficient neuromorphic computing through Schottky barrier height modulation.

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Playback language: English
Abstract
This paper presents a two-terminal lateral memristor based on electron-beam-irradiated rhenium disulfide (ReS2), exhibiting a resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices demonstrate forming-free, stable gradual resistive switching with minimal transition voltage variation (6.3%/5.3%). This is attributed to the voltage-bias-induced motion of sulfur vacancies, modulating the ReS2/metal SBH. The gradual SBH modulation stabilizes temporal variation compared to abrupt switching in MIM-based memristors. Emulation of long-term synaptic plasticity is demonstrated, suggesting potential for energy-efficient neuromorphic computing.
Publisher
npj 2D Materials and Applications
Published On
Jan 04, 2021
Authors
Sifan Li, Bochang Li, Xuewei Feng, Li Chen, Yesheng Li, Li Huang, Xuanyao Fong, Kah-Wee Ang
Tags
memristor
rhenium disulfide
Schottky barrier
resistive switching
neuromorphic computing
sulfur vacancies
long-term synaptic plasticity

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