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Abstract
Silicon-based implantable neural devices show promise for treating neurological disorders, but their longevity is limited by sidewall corrosion. This study investigated atomic layer deposition (ALD) and inductively-coupled plasma chemical vapor deposition (ICPCVD) of silicon dioxide (SiO2) to protect exposed silicon sidewalls. A potassium hydroxide (KOH) soak test evaluated coverage quality. ALD SiO2 provided superior protection against silicon dissolution compared to ICPCVD or a combination of both, highlighting ALD as a promising batch-process technique for mitigating sidewall corrosion in chronic implant applications.
Publisher
npj Materials Degradation
Published On
Feb 10, 2021
Authors
Pejman Ghelich, Nicholas F. Nolta, Martin Han
Tags
Silicon-based implants
neural devices
sidewall corrosion
atomic layer deposition
silicon dioxide
chronic implants
neurological disorders

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