Medicine and Health

Unprotected sidewalls of implantable silicon-based neural probes and conformal coating as a solution

P. Ghelich, N. F. Nolta, et al.

Silicon-based implantable neural devices hold exciting potential for tackling neurological disorders, yet their effectiveness is hampered by sidewall corrosion. Research conducted by Pejman Ghelich, Nicholas F. Nolta, and Martin Han reveals that atomic layer deposition (ALD) of silicon dioxide offers superior protection over other methods, paving the way for longer-lasting implants in chronic applications.

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Abstract

Silicon-based implantable neural devices show promise for treating neurological disorders, but their longevity is limited by sidewall corrosion. This study investigated atomic layer deposition (ALD) and inductively-coupled plasma chemical vapor deposition (ICPCVD) of silicon dioxide (SiO2) to protect exposed silicon sidewalls. A potassium hydroxide (KOH) soak test evaluated coverage quality. ALD SiO2 provided superior protection against silicon dissolution compared to ICPCVD or a combination of both, highlighting ALD as a promising batch-process technique for mitigating sidewall corrosion in chronic implant applications.

Publisher

npj Materials Degradation

Published On

Feb 10, 2021

Authors

Pejman Ghelich, Nicholas F. Nolta, Martin Han

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