Engineering and Technology
Ultrashort vertical-channel MoS<sub>2</sub> transistor using a self-aligned contact
L. Liu, Y. Chen, et al.
Discover groundbreaking advancements in ultra-scaled transistors with a self-alignment process utilizing a unique graphene/BN/MoS2 heterostructure. Achieving unprecedented gate and channel lengths, this research showcases an extraordinary on-off ratio exceeding 10^5 and an impressive on-state current at a mere 4 V bias. This study was conducted by Liting Liu, Yang Chen, Long Chen, Biao Xie, Guoli Li, Lingan Kong, Quanyang Tao, Zhiwei Li, Xiaokun Yang, Zheyi Lu, Likuan Ma, Donglin Lu, Xiangdong Yang, and Yuan Liu.
~3 min • Beginner • English
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