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Two-dimensional higher-order topology in monolayer graphdiyne

Physics

Two-dimensional higher-order topology in monolayer graphdiyne

E. Lee, R. Kim, et al.

This research by Eunwoo Lee, Rokyeon Kim, Junyeong Ahn, and Bohm-Jung Yang introduces monolayer graphdiyne as an exciting candidate for a two-dimensional higher-order topological insulator. The study reveals intriguing phenomena like charge accumulation at corners and nontrivial bulk topology, emphasizing the pivotal role of core level contributions in understanding its remarkable properties.

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Playback language: English
Abstract
Based on first-principles calculations and tight-binding model analysis, we propose monolayer graphdiyne as a candidate material for a two-dimensional higher-order topological insulator protected by inversion symmetry. The higher-order topology is manifested in the filling anomaly and charge accumulation at two corners. Nontrivial bulk topology is correctly captured only when contributions from core levels ( *p<sub>xy</sub>* and *s* orbitals) are included, confirmed by Wilson loop calculations. The higher-order band topology also influences the corresponding three-dimensional material (ABC-stacked graphdiyne), hosting monopole nodal lines and hinge states.
Publisher
npj Quantum Materials
Published On
Jan 09, 2020
Authors
Eunwoo Lee, Rokyeon Kim, Junyeong Ahn, Bohm-Jung Yang
Tags
graphdiyne
higher-order topological insulator
inversion symmetry
topology
band topology
nodal lines
hinge states
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