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Transistors with ferroelectric ZrxAl₁₋ₓOY crystallized by ZnO growth for multi-level memory and neuromorphic computing

Engineering and Technology

Transistors with ferroelectric ZrxAl₁₋ₓOY crystallized by ZnO growth for multi-level memory and neuromorphic computing

M. M. Islam, A. Ali, et al.

This research showcases the innovative development of ferroelectric ZrxAl₁₋ₓOY, revealing promising results for non-destructive readout and energy-efficient applications. The integration of this material with ZnO has led to impressive performances in memory and neuromorphic computing, with a learning accuracy of 91.82%. The work was conducted by Md Mobaidul Islam, Arqum Ali, Chanju Park, Taebin Lim, Dong Yeon Woo, Joon Young Kwak, and Jin Jang.

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