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Abstract
This paper investigates the physical origin and controllability of the spin-orbit interaction (SOI) in a narrow bandgap semiconductor InSb nanosheet using a dual-gate InSb nanosheet field-effect device. The study demonstrates efficient tuning of the SOI by applying a voltage over the dual gate, identifying an intrinsic SOI at zero dual-gate voltage due to built-in asymmetry in the device layer structure. The strong and controllable SOI in the InSb nanosheet simplifies the design and realization of spintronic, spin-based quantum, and topological quantum devices.
Publisher
npj 2D Materials and Applications
Published On
Jan 04, 2021
Authors
Yuanjie Chen, Shaoyun Huang, Dong Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, H. Q. Xu
Tags
spin-orbit interaction
InSb nanosheet
dual-gate
semiconductor
spintronics
quantum devices
controllability

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