Physics

Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

Y. Chen, S. Huang, et al.

Discover how the remarkable spin-orbit interaction (SOI) in InSb nanosheets can be finely tuned with a dual-gate arrangement, revealing an intrinsic SOI even at zero voltage. This groundbreaking research by Yuanjie Chen, Shaoyun Huang, Dong Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, and H. Q. Xu paves the way for advanced spintronic and quantum devices.

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Abstract

This paper investigates the physical origin and controllability of the spin-orbit interaction (SOI) in a narrow bandgap semiconductor InSb nanosheet using a dual-gate InSb nanosheet field-effect device. The study demonstrates efficient tuning of the SOI by applying a voltage over the dual gate, identifying an intrinsic SOI at zero dual-gate voltage due to built-in asymmetry in the device layer structure. The strong and controllable SOI in the InSb nanosheet simplifies the design and realization of spintronic, spin-based quantum, and topological quantum devices.

Publisher

npj 2D Materials and Applications

Published On

Jan 04, 2021

Authors

Yuanjie Chen, Shaoyun Huang, Dong Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, H. Q. Xu

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