Solution-processed quantum-dot light-emitting diodes (QLEDs) suffer from shelf-stability issues due to the ZnO-induced positive aging effect. This paper presents a bilayer electron-transporting layer (ETL) design using SnO₂ nanoparticles (NPs) as a buffer layer between the quantum dots (QDs) and ZnO NPs. This design suppresses QD-ETL exciton quenching, tunes charge balance, and maintains high electron conductivity. The resulting bottom-emitting QLEDs achieve a maximum luminance exceeding 100,000 cd m⁻² and a T₉₅ operational lifetime of 6200 h at 1000 cd m⁻², while completely inhibiting positive aging.

Zi Ye, Mengyu Chen, Xingtong Chen, Wenchen Ma, Xiaojuan Sun, Longjia Wu, Xiongfeng Lin, Yu Chen, Song Chen