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Si-CMOS compatible epsilon-near-zero metamaterial for two-color ultrafast all-optical switching

Engineering and Technology

Si-CMOS compatible epsilon-near-zero metamaterial for two-color ultrafast all-optical switching

A. Pianelli, R. Dhama, et al.

This innovative research by Alessandro Pianelli, Rakesh Dhama, Jarosław Judek, Rafał Mazur, and Humeyra Caglayan presents a cutting-edge multilayered epsilon-near-zero metamaterial utilizing Si-compatible materials for ultrafast all-optical switching in the visible and near-infrared spectrum, potentially revolutionizing low-power photonic components.

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Playback language: English
Abstract
This paper proposes and demonstrates a multilayered epsilon-near-zero (ENZ) metamaterial using Si-compatible titanium nitride and indium-tin-oxide materials. The device achieves ultrafast (a few hundred femtoseconds) all-optical switching at two wavelengths (visible and near-infrared) using minimal energy via intraband pumping. This approach offers potential for low-power ultrafast all-optical terahertz modulation and new hybrid integrated photonic components.
Publisher
Communications Physics
Published On
May 22, 2024
Authors
Alessandro Pianelli, Rakesh Dhama, Jarosław Judek, Rafał Mazur, Humeyra Caglayan
Tags
epsilon-near-zero
metamaterial
ultrafast switching
optical modulation
silicon-compatible
photonic components
energy-efficient
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