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Indirect Overgrowth as a Synthesis Route for Superior Diamond Nano Sensors

Engineering and Technology

Indirect Overgrowth as a Synthesis Route for Superior Diamond Nano Sensors

C. Findler, J. Lang, et al.

This exciting research by Christoph Findler, Johannes Lang, Christian Osterkamp, Miloš Nesládek, and Fedor Jelezko unveils a novel method called indirect overgrowth, significantly enhancing diamond nano sensors with nitrogen-vacancy centers. By reducing the passivation to NVH centers, their findings promise improved coherence times and are set to revolutionize quantum sensing applications!

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Playback language: English
Abstract
This paper investigates the use of indirect overgrowth, a method combining low-energy nitrogen ion implantation and chemical vapor deposition (CVD) diamond growth, to improve the properties of diamond nano sensors based on nitrogen-vacancy (NV⁻) centers. The authors find that indirect overgrowth significantly reduces the passivation of NV⁻ centers to NVH centers during the growth process, leading to enhanced coherence times (T₂ and T₂*) and a high degree of depth confinement. This improved understanding of CVD diamond overgrowth paves the way for more reliable and advanced engineering of shallow NV⁻ centers for quantum sensing applications.
Publisher
Scientific Reports
Published On
Dec 29, 2020
Authors
Christoph Findler, Johannes Lang, Christian Osterkamp, Miloš Nesládek, Fedor Jelezko
Tags
diamond nano sensors
nitrogen-vacancy centers
indirect overgrowth
coherence times
quantum sensing
chemical vapor deposition
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