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Improving the creation of SiV centers in diamond via sub-µs pulsed annealing treatment

Physics

Improving the creation of SiV centers in diamond via sub-µs pulsed annealing treatment

Y. Tzeng, F. Ke, et al.

This groundbreaking study showcases a sub-µs pulsed annealing treatment that dramatically enhances the photoluminescence of silicon-vacancy centers in diamond, conducted by a team of experts including Yan-Kai Tzeng and Steven Chu. With a remarkable 2.5-fold increase in emitting centers, this research opens new avenues for efficient SiV center creation.

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