Silicon-vacancy (SiV) centers in diamond are emerging as promising quantum emitters. This paper demonstrates a sub-µs pulsed annealing treatment that significantly increases the photoluminescence of SiV centers. Using a silane-functionalized adamantane precursor and a laser-heated diamond anvil cell, the authors mapped out the temperature and energy conditions for SiV formation. Pulsed annealing minimized SiV migration, achieving a 2.5-fold increase in emitting centers using 200-ns pulses at a 50 kHz repetition rate. This study provides a novel approach to improve SiV center creation efficiency.
Publisher
Nature Communications
Published On
Aug 23, 2024
Authors
Yan-Kai Tzeng, Feng Ke, Chunjing Jia, Yayuan Liu, Sulgiye Park, Minkyung Han, Mungo Frost, Xinxin Cai, Wendy L. Mao, Rodney C. Ewing, Yi Cui, Thomas P. Devereaux, Yu Lin, Steven Chu
Tags
silicon-vacancy centers
diamond
pulsed annealing
photoluminescence
quantum emitters
SiV migration
emitting centers
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