The Born–Oppenheimer approximation's validity is investigated using hydrogen atom scattering from a Ge(111)c(2×8) semiconductor surface. Experiments reveal bimodal energy-loss distributions, with molecular dynamics simulations reproducing one channel but not the second, higher-energy channel. This second channel's energy-loss onset matches the Ge surface bandgap, indicating efficient electron promotion from the valence to the conduction band by hydrogen atom collisions. Current understanding fails to fully explain these observations.
Publisher
Nature Chemistry
Published On
Mar 01, 2023
Authors
Kerstin Krüger, Yingqi Wang, Sophia Tödter, Felix Debbeler, Anna Matveenko, Nils Hertl, Xueyao Zhou, Bin Jiang, Hua Guo, Alec M. Wodtke, Oliver Bünermann
Tags
Born–Oppenheimer approximation
hydrogen atom scattering
Ge(111)c(2×8) surface
energy-loss distributions
electron promotion
molecular dynamics simulations
semiconductor surface
Related Publications
Explore these studies to deepen your understanding of the subject.
