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Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors

Engineering and Technology

Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors

Y. Jia, Z. Shi, et al.

This groundbreaking research by Yuping Jia and colleagues unveils a theoretical approach to enhance GaN-based semiconductors for optoelectronic applications. By transforming bulk GaN into innovative two-dimensional structures, the team predicts a remarkable increase in efficiency by eliminating harmful internal electrostatic fields while potentially improving optoelectronic properties.

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