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Design and integration of single-qubit rotations and two-qubit gates in silicon above one Kelvin

Physics

Design and integration of single-qubit rotations and two-qubit gates in silicon above one Kelvin

L. Petit, M. Russ, et al.

This groundbreaking research showcases the integration of single-qubit rotations and two-qubit gates in a silicon double quantum dot device, achieving remarkable gate times and fidelities. Conducted by a team of experts at Delft University of Technology, this advancement sets the stage for scalable quantum integrated circuits.

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