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Design and integration of single-qubit rotations and two-qubit gates in silicon above one Kelvin

Physics

Design and integration of single-qubit rotations and two-qubit gates in silicon above one Kelvin

L. Petit, M. Russ, et al.

This groundbreaking research showcases the integration of single-qubit rotations and two-qubit gates in a silicon double quantum dot device, achieving remarkable gate times and fidelities. Conducted by a team of experts at Delft University of Technology, this advancement sets the stage for scalable quantum integrated circuits.

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Playback language: English
Abstract
This paper demonstrates the successful integration of single-qubit rotations and various two-qubit gates (CROT, CPHASE, and SWAP) in a silicon double quantum dot device, operating above one Kelvin. The researchers overcome challenges related to the finite Zeeman energy difference between qubits by employing adiabatic and diabatic composite pulse sequences, achieving gate times under 100 ns and predicted fidelities exceeding 99%. This advancement significantly reduces operational overhead for quantum algorithms and paves the way for scalable quantum integrated circuits.
Publisher
Communications Materials
Published On
Nov 02, 2022
Authors
Luca Petit, Maximilian Russ, Gertjan H. G. J. Eenink, William I. L. Lawrie, James S. Clarke, Lieven M. K. Vandersypen, Menno Veldhorst
Tags
quantum computing
silicon double quantum dot
single-qubit rotations
two-qubit gates
composite pulse sequences
quantum algorithms
scalable circuits
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