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Anomalous 3D nanoscale photoconduction in hybrid perovskite semiconductors revealed by tomographic atomic force microscopy

Engineering and Technology

Anomalous 3D nanoscale photoconduction in hybrid perovskite semiconductors revealed by tomographic atomic force microscopy

J. Song, Y. Zhou, et al.

This study, conducted by Jingfeng Song, Yuanyuan Zhou, Nitin P. Padture, and Bryan D. Huey, uncovers the vital role of grain boundaries in hybrid perovskite semiconductors through innovative tomographic atomic force microscopy. Discover how GBs act as interconnected conducting channels and the implications for optimizing these materials in optoelectronic applications.

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Playback language: English
Abstract
This study investigates the role of grain boundaries (GBs) in hybrid perovskite semiconductors using tomographic atomic force microscopy (T-AFM). The researchers developed a unique approach to create a fully 3D photogenerated carrier transport map at the nanoscale, revealing GBs as highly interconnected conducting channels. Two GB types were identified: Type I GBs exhibiting enhanced carrier mobilities, and Type II GBs showing no significant enhancement. This 3D approach overcomes limitations of surface-based methods, providing crucial insights for optimizing hybrid perovskites for optoelectronic applications.
Publisher
Nature Communications
Published On
Jul 21, 2020
Authors
Jingfeng Song, Yuanyuan Zhou, Nitin P. Padture, Bryan D. Huey
Tags
grain boundaries
hybrid perovskite
semiconductors
carrier mobility
tomographic atomic force microscopy
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