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A FinFET with one atomic layer channel

Engineering and Technology

A FinFET with one atomic layer channel

M. Chen, X. Sun, et al.

This groundbreaking research by Mao-Lin Chen, Xingdan Sun, Hang Liu, and colleagues introduces the development of FinFETs featuring a single atomic layer channel. Utilizing a template-growth method, the team achieved impressive on/off ratios of approximately 10^7, pushing the limits of FinFET technology to sub-1 nm fin-widths for advanced nanoelectronics with enhanced integration and reduced power consumption.... show more
Citation Metrics
Citations
141
Influential Citations
3
Reference Count
35
Citation by Year

Note: The citation metrics presented here have been sourced from Semantic Scholar and OpenAlex.

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