This work investigates the lateral damage in large-area monolayer WS<sub>2</sub> caused by gallium focused ion beam (FIB) milling. Three distinct zones (near, dark, and far-out) away from the milling location were identified and characterized using photoluminescence (PL) and Raman spectroscopy. The study reveals an unexpected bright ring-shaped emission around the milled area and shows that while some localized damage is inevitable, distant destruction can be eliminated by reducing the ion beam current. The findings open avenues for tailoring TMDC optical properties via charge and defect engineering using FIB lithography.
Publisher
npj 2D Materials and Applications
Published On
Mar 29, 2023
Authors
Fahrettin Sarcan, Nicola J. Fairbairn, Panaiot Zotev, Toby Severs-Millard, Daniel J. Gillard, Xiaochen Wang, Ben Conran, Michael Heuken, Ayşe Erol, Alexander I. Tartakovskii, Thomas F. Krauss, Gordon J. Hedley, Yue Wang
Tags
WS2
focused ion beam
photoluminescence
Raman spectroscopy
damage characterization
optical properties
defect engineering
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