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Transition metal impurities in silicon: computational search for a semiconductor qubit

Physics

Transition metal impurities in silicon: computational search for a semiconductor qubit

C. Lee, M. Singh, et al.

This exciting research conducted by Cheng-Wei Lee, Meenakshi Singh, Adele C. Tamboli, and Vladan Stevanović explores the promise of transition metal impurities in silicon as optically active spin qubits, paving the way for silicon-based qubits that can operate at higher temperatures and facilitate advanced quantum sensing and mid-infrared communications.

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Playback language: English
Abstract
This paper explores the potential of transition metal (TM) impurities in silicon as optically active spin qubits. Using the HSE06(+U) method, the authors identify seven TM impurities exhibiting optically allowed triplet-triplet transitions within the silicon band gap. This discovery is a significant step towards developing silicon-based qubits with higher operating temperatures for quantum sensing and spin-photon interfaces for mid-infrared free-space communications.
Publisher
npj Computational Materials
Published On
Aug 19, 2022
Authors
Cheng-Wei Lee, Meenakshi Singh, Adele C. Tamboli, Vladan Stevanović
Tags
transition metal impurities
silicon
spin qubits
quantum sensing
optically active
triplet-triplet transitions
mid-infrared communications
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