Physics

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

D. Liu, F. Kaiser, et al.

Discover the groundbreaking research on the negatively charged silicon vacancy center (Vs−) in silicon carbide by Di Liu and colleagues. This study reveals critical insights into its spin-optical dynamics and proposes protocols for generating entangled multi-photon states, advancing integrated quantum photonics.

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Playback language: English

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